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906-106-16
90610616 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor 906-106-16
906-106-16 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor
2SB1132R Transistor Datasheet. Parameters and Characteristics.
Type Designator: 2SB1132R
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc) W: 0.5
Maximum collector-base voltage Ucb V: 40
Maximum collector-emitter voltage Uce V: 40
Maximum emitter-base voltage Ueb V: 6
Maximum collector current Ic max A: 1
Maksimalna temperatura (Tj) °C: 175
Transition frequency (ft) MHz: 150
Collector capacitance (Cc) pF:
Forward current transfer ratio (hFE) min: 180
Noise Figure dB: -
Package of 2SB1132R transistor: SOT89
2024-02-23 07:55:35
Page: 8
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90610616 ICOM Epitaxial planar type PNP Silicone Medium Power Transistor 906-106-16