RQA-0004-PXDQS KENWOOD FET Transistor for TK2302/3302

Silicon N-Channel MOS FET. Features. • High Output Power High Efficiency. Pout = 29.7 dBm PAE = 68% (f = 520 MHz).
 

Type Designator: RQA0004PXDQS

Marking code: PX

Type of RQA0004PXDQS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd) W: 3

Maximum drain-source voltage Uds V: 16

Maximum gate-source voltage Ugs V: 5

Maximum drain current Id A: 0.3

Maximum junction temperature (Tj) °C: 150

Rise Time of RQA0004PXDQS transistor (tr) nS:

Drain-source Capacitance (Cd) pF: 5

Maximum drain-source on-state resistance (Rds) Ohm: 3.4

Package: UPAK

2024-02-23 05:55:28

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